Thursday 28 January 2016

Mechatronics

Mechatronics

The Hall Effect Sensor

We could not end this section on Magnetism without a mention about magnetic sensors and especially the Hall Effect Sensor. Magnetic sensors convert magnetic or magnetically encoded information into electrical signals for processing by electronic circuits, and in the Sensors and Transducers tutorials we looked at inductive proximity sensors and the LDVT as well as solenoid and relay output actuators.

Magnetic sensors are solid state devices that are becoming more and more popular because they can be used in many different types of application such as sensing position, velocity or directional movement. They are also a popular choice of sensor for the electronics designer due to their non-contact wear free operation, their low maintenance, robust design and as sealed hall effect devices are immune to vibration, dust and water.

One of the main uses of Magnetic Sensors is in automotive systems for the sensing of position, distance and speed. For example, the angular position of the crank shaft for the firing angle of the spark plugs, the position of the car seats and seat belts for air-bag control or wheel speed detection for the anti-lock braking system, (ABS).

Magnetic sensors are designed to respond to a wide range of positive and negative magnetic fields in a variety of different applications and one type of magnet sensor whose output signal is a function of magnetic field density around it is called the Hall Effect Sensor.

Hall Effect Sensors are devices which are activated by an external magnetic field. We know that a magnetic field has two important characteristics flux density, (B) and polarity (North and South Poles). The output signal from a Hall effect sensor is the function of magnetic field density around the device. When the magnetic flux density around the sensor exceeds a certain pre-set threshold, the sensor detects it and generates an output voltage called the Hall Voltage, VH. Consider the diagram below.
Hall Effect Sensor Principals


hall effect sensor principals


Hall Effect Sensors consist basically of a thin piece of rectangular p-type semiconductor material such as gallium arsenide (GaAs), indium antimonide (InSb) or indium arsenide (InAs) passing a continuous current through itself. When the device is placed within a magnetic field, the magnetic flux lines exert a force on the semiconductor material which deflects the charge carriers, electrons and holes, to either side of the semiconductor slab. This movement of charge carriers is a result of the magnetic force they experience passing through the semiconductor material.

As these electrons and holes move side wards a potential difference is produced between the two sides of the semiconductor material by the build-up of these charge carriers. Then the movement of electrons through the semiconductor material is affected by the presence of an external magnetic field which is at right angles to it and this effect is greater in a flat rectangular shaped material.

The effect of generating a measurable voltage by using a magnetic field is called the Hall Effect after Edwin Hall who discovered it back in the 1870’s with the basic physical principle underlying the Hall effect being Lorentz force. To generate a potential difference across the device the magnetic flux lines must be perpendicular, (90o) to the flow of current and be of the correct polarity, generally a south pole.

The Hall effect provides information regarding the type of magnetic pole and magnitude of the magnetic field. For example, a south pole would cause the device to produce a voltage output while a north pole would have no effect. Generally, Hall Effect sensors and switches are designed to be in the “OFF”, (open circuit condition) when there is no magnetic field present. They only turn “ON”, (closed circuit condition) when subjected to a magnetic field of sufficient strength and polarity.


Hall Effect Magnetic Sensor

The output voltage, called the Hall voltage, (VH) of the basic Hall Element is directly proportional to the strength of the magnetic field passing through the semiconductor material (output ∝ H). This output voltage can be quite small, only a few microvolts even when subjected to strong magnetic fields so most commercially available Hall effect devices are manufactured with built-in DC amplifiers, logic switching circuits and voltage regulators to improve the sensors sensitivity, hysteresis and output voltage. This also allows the Hall effect sensor to operate over a wider range of power supplies and magnetic field conditions.



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